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SSM9510GM Scheda tecnica(PDF) 7 Page - Silicon Standard Corp. |
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SSM9510GM Scheda tecnica(HTML) 7 Page - Silicon Standard Corp. |
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7 / 8 page ![]() www.SiliconStandard.com 7 of 8 SSM9510GM 2/10/2005 Rev.2.01 P-channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) t f VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 2 4 6 8 10 12 02 46 8 10 12 14 16 Q G , Total Gate Charge (nC) I D =-5.3A V DS =-24V 10 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s 10s DC T A =25 o C Single Pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135°C/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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