SSM9922EO datasheet(4/5 Pages) SSC

Il numero della parte	SSM9922EO

Spiegazioni elettronici	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	SSC [Silicon Standard Corp.]

Homepage	http://www.siliconstandard.com

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SSM9922(G)EO

Rev.2.01 12/06/2004

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

td(on) tr

td(off) t

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

203040

5060

Q G , Total Gate Charge (nC)

V DS =10 V

V DS =12 V

V DS =16 V

I D =6 A

100

1000

10000

1317

2125

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

0.0001

0.0010

0.0100

0.1000

1.0000

10.0000

100.0000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=208°C/W

Single Pulse

0.01

0.02

0.05

0.1

0.2

Duty factor=0.5

0.01

0.1

100

0.1

100

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

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