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SSM9974GS Scheda tecnica(PDF) 4 Page - Silicon Standard Corp. |
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SSM9974GS Scheda tecnica(HTML) 4 Page - Silicon Standard Corp. |
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4 / 6 page ![]() www.SiliconStandard.com 4 of 6 SSM9974GP,S 5/12/2006 Rev.3.1 SSM9974GP,S 5/12/2006 Rev.3.1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 131721 2529 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 4 8 12 16 020 40 60 80 Q G , Total Gate Charge (nC) V DS =48V V DS =38V V DS =30V I D =35 A 0 25 50 75 100 125 02 468 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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