2003 Mar 20

6

NXP Semiconductors

Product data sheet

General purpose controlled avalanche

(double) diodes

BAS29; BAS31; BAS35

Fig.5

Reverse current as a function of junction

temperature.

handbook, halfpage

10

200

0

MBH282

100

Tj (

IR

(

µA)

1

(1)

(2)

Fig.6

Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

010

20

30

VR (V)

40

Cd

(pF)

30

10

0

20

MGD003

handbook, full pagewidth

t rr

(1)

I F

t

output signal

t r

t

t p

10%

90%

VR

input signal

V = V

I x R

RF

S

R = 50

S

Ω

IF

D.U.T.

R = 50

i

Ω

SAMPLING

OSCILLOSCOPE

MGA881

Fig.7 Reverse recovery voltage test circuit and waveforms.