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GTL2010BS Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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GTL2010BS Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
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5 / 20 page ![]() GTL2010_6 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 06 — 3 March 2008 5 of 20 NXP Semiconductors GTL2010 10-bit bidirectional low voltage translator 8. Application design-in information 8.1 Bidirectional translation For the bidirectional clamping configuration, higher voltage to lower voltage or lower voltage to higher voltage, the GREF input must be connected to DREF and both pins pulled to HIGH side VCC through a pull-up resistor (typically 200 kΩ). A filter capacitor on DREF is recommended. The processor output can be totem pole or open-drain (pull-up resistors may be required) and the chip set output can be totem pole or open-drain (pull-up resistors are required to pull the Dn outputs to VCC). However, if either output is totem pole, data must be unidirectional or the outputs must be 3-stateable and the outputs must be controlled by some direction control mechanism to prevent HIGH-to-LOW contentions in either direction. If both outputs are open-drain, no direction control is needed. The opposite side of the reference transistor (SREF) is connected to the processor core power supply voltage. When DREF is connected through a 200 k Ω resistor to a 3.3 V to 5.5 V VCC supply and SREF is set between 1.0 V to (VCC − 1.5 V), the output of each Sn has a maximum output voltage equal to SREF and the output of each Dn has a maximum output voltage equal to VCC. Typical bidirectional voltage translation. Fig 4. Bidirectional translation to multiple higher voltage levels such as an I2C-bus application GREF DREF 002aac060 D1 D2 200 k Ω CHIPSET I/O VCC 5 V totem pole or open-drain I/O GND SREF S1 S2 increase bit size by using 10-bit GTL2010 or 22-bit GTL2000 D3 D4 CHIPSET I/O VCC D5 Dn 3.3 V S3 S4 S5 Sn CPU I/O VCORE 1.8 V 1.5 V 1.2 V 1.0 V |
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