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STPSC606D Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STPSC606D Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  September 2009 Doc ID 16284 Rev 1 1/8 8 STPSC606 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. Device summary IF(AV) 6 A VRRM 600 V Tj (max) 175 °C QC (typ) 6 nC K K A K A NC TO-220AC STPSC606D D2PAK STPSC606G www.st.com |
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