PBLS4002D_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 5 January 2009

3 of 15

NXP Semiconductors

PBLS4002D

40 V PNP BISS loadswitch

[1]

Device mounted on an FR4 (PCB), single-sided copper, tin-plated and standard footprint.

[2]

[3]

total power dissipation

[1] -

250

mW

[2] -

350

mW

[3] -

400

mW

TR2; NPN resistor-equipped transistor

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

10

V

input voltage

positive

-

+30

V

negative

-

−10

V

output current

-

100

mA

peak collector current

-

100

mA

total power dissipation

-

200

mW

Per device

total power dissipation

[1] -

400

mW

[2] -

530

mW

[3] -

600

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit