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100PS Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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100PS Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
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1 / 13 page ![]() PSMN5R6-100PS N-channel 100 V 5.6 m Ω standard level MOSFET Rev. 01 — 23 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications DC-to-DC convertors Load switching Motor control Server power supplies 1.4 Quick reference data [1] Continious current limited by package. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb =25°C; VGS =10V; see Figure 1 [1] - - 100 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 306 W Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =25 A; Tj = 25 °C; see Figure 11 and 12 -4.3 5.6 m Ω |
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