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ZXMS6005DG Scheda tecnica(PDF) 4 Page - Diodes Incorporated

Il numero della parte ZXMS6005DG
Spiegazioni elettronici  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET??MOSFET
PDF  9 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6005DG Scheda tecnica(HTML) 4 Page - Diodes Incorporated

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ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
4 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6005DG is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol
Description
Min
Max
Units
VIN
Input voltage range
0
5.5
V
TA
Ambient temperature range
-40
125
°C
VIH
High level input voltage for MOSFET to be on
3
5.5
V
VIL
Low level input voltage for MOSFET to be off
0
0.7
V
VP
Peripheral supply voltage (voltage to which load is referred)
0
24
V
CHARACTERISTICS
110
10m
100m
1
10
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
See Note (a)
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
See Note (a)
Derating Curve
Temperature (°C)
See Note (b)
100µ
1m
10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
80
90
100
T
amb
=25°C
See Note (a)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Pulse Width (s)
100µ
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25°C
See Note (a)
Pulse Power Dissipation
Pulse Width (s)



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