Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Epitaxial Planar Silicon Transistor

VHF to UHF Low-Noise Wide-Band

Amplifier Applications

Ordering number:ENN6288

2SC5488

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D1099TS (KOTO) TA-1675 No.6288–1/4

0.25

0.2

1.4

0.45

1

3

2

0.1

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2159

[2SC5488]

Features

· Low noise : NF=1.0dB typ (f=1GHz).

· High gain :

· Ultrasmall, slim flat-lead package.

(1.4mm

×0.8mm×0.6mm)

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Emitter

3 : Collector

SANYO : SSFP

Marking : LN

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

2V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

-

o

t

-

r

o

t

c

e

ll

o

CV

O

E

C

0

1V

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

e

t

t

i

m

EV

O

B

E

2V

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CIC

0

7A

m

n

o

i

t

a

p

i

s

s

i

D

r

o

t

c

e

ll

o

CPC

0

0

1W

m

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

t

n

e

r

r

u

C

f

f

o

t

u

C

r

o

t

c

e

ll

o

CI

O

B

C

V B

C

I

,

V

0

1

=

E 0

=0

.

1A

µ

t

n

e

r

r

u

C

f

f

o

t

u

C

r

e

t

t

i

m

EI

O

B

E

V B

E

I

,

V

1

=

C 0

=0

1A

µ

n

i

a

G

t

n

e

r

r

u

C

C

D

h E

F

V E

C

I

,

V

5

=

C

A

m

0

2

=

0

90

0

2

t

c

u

d

o

r

P

h

t

d

i

w

d

n

a

B

-

n

i

a

G

fT

V E

C

I

,

V

5

=

C

A

m

0

2

=

57

z

H

G

e

c

n

a

t

i

c

a

p

a

C

t

u

p

t

u

Ob

o

CV B

C

z

H

M

1

=

f

,

V

0

1

=

7

.

02

.

1F

p

e

c

n

a

t

i

c

a

p

a

C

r

e

f

s

n

a

r

T

e

s

r

e

v

e

Re

r

CV B

C

z

H

M

1

=

f

,

V

0

1

=

5

4

.

0F

p

n

i

a

G

r

e

f

s

n

a

r

T

d

r

a

w

r

o

F

|

e

1

2

S

|

V E

C

I

,

V

5

=

C

z

H

G

1

=

f

,

A

m

0

2

=

92

1B

d

|

e

1

2

S

|

V E

C

I

,

V

2

=

C

z

H

G

1

=

f

,

A

m

3

=

5

.

8B

d

e

r

u

g

i

F

e

s

i

o

N

F

NV E

C

I

,

V

5

=

C

z

H

G

1

=

f

,

A

m

7

=0

.

18

.

1B

d