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DS26F32MJ/883 Scheda tecnica(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Il numero della parte DS26F32MJ/883
Spiegazioni elettronici  DS26F32MQML
PDF  11 Pages
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Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS26F32MJ/883 Scheda tecnica(HTML) 6 Page - National Semiconductor (TI)

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Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: Derate J package 10.0mW/˚C above +25˚C, derate W package 7.1mW/˚C above +25˚C, derate E package 11.5mW/˚C above +25˚C.
Note 3: Power dissipation must be externally controlled at elevated temperatures.
Note 4: Parameter tested go-no-go only.
Note 5: Tested at 50pF guarantees limit at 15pF & 5pF.
Note 6: Tested at 50pF, system capacitance exceeds 5pF to 15pF.
Note 7: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate sensitive in a space
environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified
in Mil-Std-883, Method 1019.5, Condition A
20163302
FIGURE 1. Logic Symbol
20163303
FIGURE 2. Load Test Circuit for Three-State Outputs
20163304
FIGURE 3. Propagation Delay (Notes 8, 9, 10)
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