STB11NM80 datasheet(1/17 Pages) STMICROELECTRONICS

Il numero della parte	STB11NM80

Spiegazioni elettronici	N-channel 800 V, 0.35 Ω, 11 A MDmesh™Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

PDF	17 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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1 / 17 page

March 2010

Doc ID 9241 Rev 10

1/17

17

STB11NM80, STF11NM80

STP11NM80, STW11NM80

N-channel 800 V, 0.35

Ω, 11 A MDmesh™ Power MOSFET

TO-220, TO-220FP, D2PAK, TO-247

Features

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Best RDS(on)*Qg in the industry

Application

■ Switching applications

Description

The MDmesh™ associates the multiple drain

process with the company’s PowerMesh™

horizontal layout assuring an outstanding low on-

resistance. The adoption of the company’s

proprietary strip technique yields overall dynamic

performance that is significantly better than that of

similar competition’s products.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

RDS(on)*Qg

ID

STB11NM80

800 V

< 0.40 Ω

14

Ω*nC

11 A

STF11NM80

STP11NM80

STW11NM80

TO-247

D²PAK

TO-220

TO-220FP

1

2

3

1

3

1

2

3

1

2

3

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB11NM80

B11NM80

D²PAK

Tape and reel

STF11NM80

F11NM80

TO-220FP

Tube

STP11NM80

P11NM80

TO-220

STW11NM80

W11NM80

TO-247

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Codice articolo simile - STB11NM80

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STB11NM80	582Kb / 14P	N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET 20-Oct-2005
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Inchange Semiconductor ...	STB11NM80	332Kb / 2P	isc N-Channel MOSFET Transistor
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