STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z

Electrical characteristics

Doc ID 9479 Rev 7

5/17

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise Time

Figure 19

Figure 24

-

22

13

-

ns

ns

Turn-off delay time

Fall time

-

55

28

-

ns

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Source-drain current

-

8A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

32

A

(2)

2.

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs,

Figure 21

-

950

10

21

ns

µC

A

Table 9.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

30

-

V