PD57006STR-E datasheet(1/22 Pages) STMICROELECTRONICS

Il numero della parte	PD57006STR-E

Spiegazioni elettronici	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PDF	22 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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1 / 22 page

May 2010

Doc ID 12611 Rev 2

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22

PD57006-E

PD57006S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V

■ New RF plastic package

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. PD57006 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. Device’s

superior linearity performance makes it an ideal

solution for car mobile radio. The PowerSO-10

plastic package, designed to offer high reliability,

is the first ST JEDEC approved, high power SMD

package. It has been specially optimized for RF

needs and offers excellent RF performances and

ease of assembly. Mounting recommendations

are available in www.st.com/rf/ (look for

application note AN1294).

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order code

Package

Packing

PD57006-E

PowerSO-10RF (formed lead)

Tube

PD57006S-E

PowerSO-10RF (straight lead)

Tube

PD57006TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD57006STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com

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