STFW3N150 datasheet(1/15 Pages) STMICROELECTRONICS

Il numero della parte	STFW3N150

Spiegazioni elettronici	N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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June 2010

Doc ID 13102 Rev 9

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15

STFW3N150

STP3N150, STW3N150

N-channel 1500 V, 6

Ω, 2.5 A, PowerMESH™ Power MOSFET

in TO-220, TO-247, TO-3PF

Features

■ 100% avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF plastic package

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

Application

Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAYTM process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

company’s proprietary edge termination structure,

gives the lowest RDS(on) per area, unrivalled gate

charge and switching characteristics.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max.

ID

PTOT

STFW3N150

STP3N150

STW3N150

1500 V

< 9

Ω

< 9

Ω

< 9

Ω

2.5 A

63 W

140 W

TO-220

1

2

3

TO-247

1

2

3

1

2

3

TO-3PF

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STFW3N150

3N150

TO-3PF

Tube

STP3N150

3N150

TO-220

Tube

STW3N150

3N150

TO-247

Tube

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