STP2NK100Z datasheet(4/16 Pages) STMICROELECTRONICS

Il numero della parte	STP2NK100Z

Spiegazioni elettronici	N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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4 / 16 page

Electrical characteristics

STD2NK100Z - STP2NK100Z - STU2NK100Z

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

1000

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30 V

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 50 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 0.9 A

6.25

8.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID = 0.9 A

2.4

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

499

Coss eq.

(2)

Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS =0, VDS =0 to 800 V

Gate input resistance

f=1 MHz, open drain

6.6

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=800 V, ID = 1.85 A

VGS =10 V

(see Figure 17)

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