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BAT42WS Scheda tecnica(PDF) 1 Page - EIC discrete Semiconductors |
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BAT42WS Scheda tecnica(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  BAT42WS - BAT43WS SCHOTTKY BARRIER DIODES FEATURES : * Low forward voltage drop * Fast switching * Ultra-small surface mount package * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * BAT42WS Marking Code : X9 * BAT43WS Marking Code : Y9 Maximum Ratings and Thermal Characteristics (Rating at 25°C ambient temperature unless otherwise specified.) Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 30 V Average Rectified Output Current IO 100 mA Continuous Forward Current IF 200 mA Repetitive Peak Forward Current at tp < 1 s IFRM 500 mA Non-repetitive Peak Forward Surge Current at tp < 10 ms IFSM 4A Power Dissipation Ptot 200 mW Thermal Resistance Junction to Ambient Air RθJA 625 °C/W Junction Temperature TJ -55 to + 125 °C Storage temperature range TSTG -55 to + 125 °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Min Typ Max Unit Reverse Breakdown Voltage V(BR)R 30 - - V VR = 25 V - - 0.5 VR = 25 V , TJ = 100 °C - - 100 IF = 200 mA - - 1.00 BAT42WS IF = 10 mA - - 0.40 BAT42WS IF = 50 mA - - 0.65 BAT43WS IF = 2 mA 0.26 - 0.33 BAT43WS IF = 15 mA - - 0.45 Total Capacitance CT VR = 1 V, f = 1MHz - - 10 pF IF = 10mA, IR = 10mA , Irr = 1mA, RL = 100 Ω Page 1 of 2 Rev. 03 : May 8, 2006 V IR = 100 µA (pulsed) µA Reverse Recovery Time Trr - - 5 ns Test Condition Parameter VF IR Forward Voltage Drop Peak Reverse Current 2.80 2.30 1.80 1.60 Dimensions in millimeters SOD-323 Certificate TH97/10561QM Certificate TW00/17276EM |
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