BSB012N03LX3G datasheet(2/11 Pages) INFINEON

2 / 11 page

BSB012N03LX3 G

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

T A=25 °C,

R thJA=45 K/W

2.8

Operating and storage temperature

T j, T stg

-40….150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

bottom

1.0

K/W

top

1.4

Device on PCB

R thJA

6 cm

2 cooling area5)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=250 µA

2.2

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=30 V, V GS=0 V,

T j=125 °C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=25 A

1.4

1.8

Ω

V GS=10 V, I D=30 A

1.0

1.2

Gate resistance

R G

0.2

0.5

1.0

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

140

Value

Values

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.1

page 2

2009-11-17

BSB012N03LX3G Scheda tecnica(PDF) 2 Page - Infineon Technologies AG

BSB012N03LX3G Scheda tecnica(HTML) 2 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Scheda tecnica Scarica

Link URL