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IPT08Q06-CEB Scheda tecnica(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

Il numero della parte IPT08Q06-CEB
Spiegazioni elettronici  High current density due to double mesa technology
PDF  4 Pages
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Produttore elettronici  IPS [IP SEMICONDUCTOR CO., LTD.]
Homepage  http://www.ipsemiconductor.com
Logo IPS - IP SEMICONDUCTOR CO., LTD.

IPT08Q06-CEB Scheda tecnica(HTML) 2 Page - IP SEMICONDUCTOR CO., LTD.

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ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)
2
STATIC CHARACTERISTICS
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j
– c)
Junction to case (AC)
1.6
℃/W
Symbol
Test Conditions
Value(MAX)
Unit
VTM
ITM = 17A, t p = 380uS
Tj = 125 ℃
1.55
V
IDRM
VD = VDRM
Tj = 125 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
Symbol
Test Condition
Quadrant
IPT08Q06-xxB
Unit
CE
BE
IGT
VD = 12V RL = 30
Ω
I
– II – III
IV
MAX
25
50
50
100
mA
VGT
ALL
MAX
1.3
V
VGD
VD=VDRM, RL=3.3K
Ω,
Tj = 125 ℃
ALL
MIN
0.2
V
IL
IG = 1.2 IGT
I
– III – IV
MAX
40
50
mA
II
80
100
IH
IT = 100mA
MAX
25
50
mA
dV/dt
VD = 67% VDRM gate open Tj = 125 ℃
MIN
200
400
V/us
IPT08Q06-xxB



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