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Motore di ricerca datesheet componenti elettronici |
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GF1A Scheda tecnica(PDF) 1 Page - EIC discrete Semiconductors |
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GF1A Scheda tecnica(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  GF1A - GF1M GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.067 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Ta = 75 °C IF(AV) 1.0 A Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. VF 1.0 V Maximum DC Reverse Current Ta = 25 °C IR 5.0 μA at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 μA Typical Reverse Recovery Time ( Note 1 ) Trr 2.0 μs Typical Junction Capacitance (Note2) CJ 8pF Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 03 : October 14, 2005 RATING IFSM 30 A 2.0 ± 0.2 2.1 ± 0.2 SMA (DO-214AC) 1.2 ± 0.2 2.6 ± 0.15 Dimensions in millimeter 1.1 ± 0.3 0.2 ± 0.07 |
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