GN2S datasheet(1/1 Pages) EIC

Il numero della parte	GN2S

Spiegazioni elettronici	GLASS PASSIVATED JUNCTION

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Produttore elettronici	EIC [EIC discrete Semiconductors]

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GN2S

GLASS PASSIVATED JUNCTION

SILICON SURFACE MOUNT

PRV : 700 Volts

Io : 1.25 Amperes

FEATURES :

* Glass passivated chip

* High current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

MECHANICAL DATA :

* Case : SMB Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Lead Formed for Surface Mount

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.1079 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

VALUE

UNIT

Maximum Repetitive Peak Reverse Voltage

VRRM

700

V

Maximum RMS Voltage

VRMS

490

V

Maximum DC Blocking Voltage

VDC

700

V

Minimum Average Output Forward Current

Ta = 25 °C

1.25

Tc = 55 °C

3.75

Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 2.0 A, Tc = 25 °C

VF

1.0

V

Maximum DC Reverse Current

Ta = 25 °C

IR

2.0

μA

at rated DC Blocking Voltage

Ta = 100 °C

IR(H)

20

μA

Typical Junction Capacitance (Note1)

CJ

75

pF

Junction Temperature Range

TJ

- 65 to + 150

°C

Storage Temperature Range

TSTG

- 65 to + 150

°C

Note :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

Page 1 of 1

Rev. 00 : December 15, 2006

IFSM

80

A

RATING

IO

A

0.22

± 0.07

2.0

± 0.1

2.3

± 0.2

3.6

± 0.15

SMB (DO-214AA)

1.1

± 0.3

Dimensions in millimeters

Certificate TH97/10561QM

Certificate TW00/17276EM

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