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SILICON TRANSISTOR

2SC3840

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

HIGH SPEED HIGH VOLTAGE SWITCHING

DATA SHEET

Document No. D18456EJ1V0DS00 (1st edition)

Date Published November 2006 NS CP(K)

Printed in Japan

2006

DESCRIPTION

The 2SC3840 is designed for use in high speed and high voltage switching.

It is suitable for switching regulators, DC-DC converters and ultrasonic appliance applications.

FEATURES

• High speed switching

• High voltage

°C)

Collector to Base Voltage

600

V

Collector to Emitter Voltage

600

V

Emitter to Base Voltage

7.0

V

Collector Current (DC)

1.0

A

Collector Current (pulse)

Note

2.0

A

°C)

15

W

Junction Temperature

150

°C

Storage Temperature

−55 to +150

°C

Note PW

≤ 300

μs, Duty Cycle ≤ 10%

PACKAGE DRAWING (Unit: mm)