STB80PF55, STP80PF55

Electrical characteristics

Doc ID 8177 Rev 6

5/16

Note:

For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Table 7.

Source drain diode

Symbol

Parameter

Test condictions

Min.Typ.Max.

Unit

(1)

1.

Pulse width limited by Tjmax .

Source-drain current

Source-drain current (pulsed)

-

10

40

A

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

Forward on voltage

-

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

110

495

9

ns

µC

A