Characteristics

STPS20L40C

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1

Characteristics

When the diodes 1 and 2 are used simultaneously :

Table 1.

Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

40

V

30

A

Average forward current

δ = 0.5

Per diode

Per device

10

20

A

Surge non repetitive forward current

180

A

Peak repetitive reverse current

1

A

Non repetitive peak reverse current

2

A

Repetitive peak avalanche power

4000

W

Storage temperature range

-65 to + 150

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 2.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

Coupling

4.5

3.5

2.5

°C/W

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation:

2

(RMS)

Reverse leakage current

0.7

mA

15

35

mA

VF

(1)

Forward voltage drop

0.55

V

0.44

0.5

0.73

0.62

0.72

dPtot

dTj

---------------

1

Rth j

a

–

()

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