STPS61L45CW datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Characteristics

STPS61L45C

2/8

Characteristics

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x R

th(j-c)(Per diode) + P(diode 2) x Rth(c).

To evaluate the conduction losses use the following equation:

P = 0.3 x IF(AV) + 0.007 x IF

(RMS)

Table 2.

Absolute ratings (limiting values per diode at 25 °C unless otherwise

specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS)

RMS forward current

IF(AV)

Average forward current

δ = 0.5

Tc = 120 °C

Tc = 115 °C

Per diode

Per device

IFSM

Surge non repetitive forward current tp = 10 ms sinusoidal

500

PARM

Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

10000

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature (1)

condition to avoid runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

Total

1.3

0.75

°C/W

Rth(c)

Coupling

0.2

°C/W

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

1.5

Tj = 125 °C

190

400

(2)

Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 5 A

0.35

Tj = 125 °C

0.23

Tj = 25 °C

IF = 15 A

0.43

0.50

Tj = 125 °C

0.34

0.40

Tj = 25 °C

IF = 30 A

0.50

0.56

Tj = 125 °C

0.45

0.51

dPtot

dTj

---------------

Rth j

–

()

--------------------------

STPS61L45CW Scheda tecnica(PDF) 2 Page - STMicroelectronics

STPS61L45CW Scheda tecnica(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

Scheda tecnica Scarica

Link URL