TN25_06 datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

TN25 and TYNx25 Series

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Figure 3: Average and D.C. on-state current

versus ambient temperature (copper surface

under tab: S=1cm2) (D2PAK)

Figure

Relative

variation

thermal

impedance versus pulse duration

Figure 5: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature

Figure 6: Surge peak on-state current versus

number of cycles

Figure 7: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding values of I²t

Figure 8: On-state characteristics (maximum

values)

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(A)

T(AV)

(°C)

amb

α = 180°

D.C.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

K=[Z /R

th]

t (s)

Zth(j-c)

Zth(j-a)

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

IGT

IH & IL

100

1000

100

150

200

250

300

350

(A)

TSM

Number of cycles

Non repetitive

T initial=25°C

Repetitive

T =100°C

t =10ms

One cycle

0.01

0.10

1.00

10.00

100

1000

2000

(A), I t (A s)

TSM

t (ms)

I t

ITSM

T initial = 25°C

dI/dt limitation

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

100

300

(A)

(V)

Tj=max

T =25°C

V =0.77V

R =14m

T max.:

Ω

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