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STM8L101F2T3 Scheda tecnica(PDF) 46 Page - STMicroelectronics |
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STM8L101F2T3 Scheda tecnica(HTML) 46 Page - STMicroelectronics |
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46 / 81 page ![]() Electrical parameters STM8L101xx 46/81 Doc ID 15275 Rev 11 9.3.4 Clock and timing characteristics Internal clock sources Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Figure 16. Typical HSI frequency vs. VDD Table 22. HSI oscillator characteristics (1) 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency VDD = 3.0 V - 16 - MHz ACCHSI Accuracy of HSI oscillator (factory calibrated) VDD = 3.0 V, TA = 25 °C -1 1 % VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C -2.5 2 % VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C -4.5 2 % VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C -1.5(2) 2. Data based on characterization results, not tested in production. 1.5(2) % VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C -2(2) 2(2) % 1.65 V ≤ VDD ≤ 3.6 V, -40 °C ≤ TA ≤125 °C -4.5(2) 3(2) % IDD(HSI) HSI oscillator power consumption - 70 100(2) µA ai17013 15 15.2 15.4 15.6 15.8 16 16.2 16.4 16.6 16.8 17 1.65 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85 3 3.15 3.3 3.45 3.6 V DD [V] -40°C 25°C 85°C 125°C |
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