DCP56 datasheet(1/4 Pages) DIODES

Il numero della parte	DCP56

Spiegazioni elettronici	NPN SURFACE MOUNT TRANSISTOR

PDF	4 Pages

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Produttore elettronici	DIODES [Diodes Incorporated]

Homepage	http://www.diodes.com

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1 / 4 page

DS30796 Rev. 6 - 2

1 of 4

www.diodes.com

DCP56/-16

NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (DCP53)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT-223

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Finish - Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking & Type Code Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.115 grams (approximate)

2

3

4

1

SOT-223

4

3

2

1

C

B

E

TOP VIEW

3

1

2,4

COLLECTOR

BASE

EMITTER

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

1

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation @ TA = 25ºC (Note 3)

Pd

1

W

Operating and Storage Temperature Range

Tj, TSTG

-55 to 150

°C

Thermal Resistance, Junction to Ambient Air @TA = 25°C (Note 3)

RθJA

125

°C/W

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

100

—

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

80

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

—

V

IE = 10μA, IC = 0

Collector-Base Cutoff Current

ICBO

—

0.1

20

μA

VCB = 30V, IE = 0

VCB = 30V, IE = 0,TA = 150°C

Emitter-Base Cutoff Current

IEBO

—

10

μA

VEB = 5.0V, IC = 0

ON CHARACTERISTICS (Note 4)

25

40

25

—

250

—

IC = 5.0mA, VCE = 2.0V

IC = 150mA, VCE = 2.0V

IC = 500mA, VCE = 2.0V

DC Current Gain

hFE

100

160

250

—

IC = 150mA, VCE = 2.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

—

0.5

V

IC = 500mA, IB = 50mA

Base-Emitter Turn-On Voltage

VBE (ON)

—

1.0

V

IC = 500mA, VCE = 2.0V

SMALL SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

fT

—

200

—

MHz

IC = 50mA, VCE = 5.0V,

f = 100MHz

DCP56-16

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Pulse Test: Pulse width

= ≤300μs, Duty Cycle ≤ 2%.

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