DNLS160 datasheet(2/4 Pages) DIODES

2 / 4 page

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

⎯

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

⎯

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

⎯

IE = 100μA, IC = 0

Collector Cutoff Current

ICBO

⎯

100

μA

VCB = 60V, IE = 0

VCB = 60V, IE = 0, TA = 150°C

Collector Cutoff Current

ICES

⎯

100

VCE = 60V, VBE = 0

Emitter Cutoff Current

IEBO

⎯

100

VEB = 5V, IC = 0

ON CHARACTERISTICS (Note 4)

DC Current Gain

hFE

250

200

100

320

280

165

⎯

VCE = 5V, IC = 1mA

VCE = 5V, IC = 500mA

VCE = 5V, IC = 1A

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

140

110

140

250

IC = 100mA, IB = 1mA

IC = 500mA, IB = 50mA

IC = 1A, IB = 100mA

Collector-Emitter Saturation Resistance

RCE(SAT)

⎯

140

250

Ω

IC = 1A, IB = 100mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

0.91

1.1

IC = 1A, IB = 50mA

Base-Emitter Turn On Voltage

VBE(ON)

⎯

0.81

0.9

VCE = 5V, IC = 1A

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

VCB = 10V, f = 1.0MHz

Current Gain-Bandwidth Product

150

270

⎯

MHz

VCE = 10V, IC = 50mA, f = 100MHz

Notes:

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Maximum Power Dissipation vs.

Ambient Temperature

150

200

250

300

Fig. 2 Typical Collector Current vs.

Collector-Emitter Voltage

DS31390 Rev. 3 - 2

2 of 4

www.diodes.com

DNLS160

DNLS160 Scheda tecnica(PDF) 2 Page - Diodes Incorporated

DNLS160 Scheda tecnica(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL