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ZTX968 Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte ZTX968
Spiegazioni elettronici  PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
PDF  3 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX968 Scheda tecnica(HTML) 2 Page - Diodes Incorporated

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PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 – JUNE 94
FEATURES
* 4.5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* High gain
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-20
A
Continuous Collector Current
IC
-4.5
A
Practical Power Dissipation*
Ptotp
1.58
W
Power Dissipation at Tamb=25°C
Ptot
1.2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-15
-28
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-12
-20
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-6
-8
V
IE=-100µA
Collector Cut-Off Current
ICBO
-50
-1
nA
µ
A
VCB=-12V
VCB=-12V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-50
-100
-220
-100
-150
-300
mV
mV
mV
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-5A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-930
-1050 mV
IC=-5A, IB=-200mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-830
-1000 mV
IC=-5A, VCE=-1V*
E-Line
TO92 Compatible
ZTX968
3-333
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Static Forward Current
Transfer Ratio
hFE
300
300
200
150
450
450
300
240
50
1000
IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
Transition Frequency
fT
80
MHz
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
161
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
120
116
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
ZTX968
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t1
tP
D=t1/tP
Case
te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-334



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