CMLDM3757 datasheet(1/2 Pages) CENTRAL

Il numero della parte	CMLDM3757

Spiegazioni elettronici	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	CENTRAL [Central Semiconductor Corp]

Homepage	http://www.centralsemi.com

Logo

1 / 2 page

MAXIMUM RATINGS: (TA=25°C)

SYMBOL N-CH (Q1)

P-CH (Q2)

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State)

ID

540

430

mA

Maximum Pulsed Drain Current (tp=10μs)

IDM

1500

750

mA

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C)

N-CH (Q1)

P-CH (Q2)

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

IGSSF, IGSSR VGS=4.5V, VDS=0

-

5.0

-

2.0

μA

IDSS

VDS=16V, VGS=0

-

1.0

-

1.0

μA

BVDSS

VGS=0, ID=250μA

20

-

20

-

V

VGS(th)

VDS=VGS, ID=250μA

0.45

1.0

0.45

1.0

V

VSD

VGS=0, IS=350mA

-

1.2

-

1.2

V

rDS(ON)

VGS=4.5V, ID=540mA

-

0.55

-

Ω

rDS(ON)

VGS=4.5V, ID=430mA

-

0.9

Ω

rDS(ON)

VGS=2.5V, ID=500mA

-

0.7

-

Ω

rDS(ON)

VGS=2.5V, ID=300mA

-

1.2

Ω

rDS(ON)

VGS=1.8V, ID=350mA

-

0.9

-

Ω

rDS(ON)

VGS=1.8V, ID=150mA

-

2.0

Ω

CMLDM3757

SURFACE MOUNT

N-CHANNEL AND P-CHANNEL

ENHANCEMENT-MODE

COMPLEMENTARY MOSFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM3757

consists of complementary N-Channel and P-Channel

Enhancement-mode silicon MOSFETs designed for

high speed pulsed amplifier and driver applications.

These MOSFETs offer Very Low rDS(ON) and Low

Threshold Voltage.

MARKING CODE: 3C7

FEATURES:

• ESD Protection up to 2kV

• 350mW Power Dissipation

• Very Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-563 Surface Mount Package

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

• Device is Halogen Free by design

SOT-563 CASE

R1 (22-September 2010)

www.centr a lsemi.com

Codice articolo simile - CMLDM3757

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Central Semiconductor C...	CMLDM3757	1Mb / 5P	ENHANCEMENT-MODE COMPLEMENTARY MOSFET

More results

Descrizione simile - CMLDM3757

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Central Semiconductor C...	CMLDM7484	593Kb / 2P	N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
	CMRDM3575	420Kb / 2P	N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
	CMLM0708A	590Kb / 2P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS
	CMRDM3575	420Kb / 2P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
	CMLDM7585	594Kb / 2P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
	CTLDM7181-M832D	473Kb / 2P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
	CMRDM3575	421Kb / 2P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
	CMLDM7585	1Mb / 4P	SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
	CMRDM3575	436Kb / 2P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
	CMBDM3590	334Kb / 3P	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS R0 9-March 2009

More results

CMLDM3757 Scheda tecnica(PDF) 1 Page - Central Semiconductor Corp

CMLDM3757 Scheda tecnica(HTML) 1 Page - Central Semiconductor Corp

Codice articolo simile - CMLDM3757

Descrizione simile - CMLDM3757

Html Pages

1 2

Scheda tecnica Scarica

Link URL