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2SC6144SG Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device

Il numero della parte 2SC6144SG
Spiegazioni elettronici  High-Current Switching Applications
PDF  4 Pages
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6144SG Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device

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2SC6144SG
No. A1800-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
10
μA
DC Current Gain
hFE
VCE=2V, IC=270mA
200
560
Gain-Bandwidth Product
fT
VCE=10V, IC=3A
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=300mA
180
360
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=6A, IB=300mA
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100μA, IE=0A
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=100μA, IC=0A
5
V
Turn-On Time
ton
See specified Test Circuit.
62
ns
Storage Time
tstg
See specified Test Circuit.
350
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Switching Time Test Circuit
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT13454
05
234
1
0
1
7
6
5
4
3
2
8
9
10
IB=0mA
5mA
30mA
40mA
45mA
50mA
60mA
10mA
20mA
25mA
35mA
15mA
IT13455
0
2.0
1.0
1.5
0.5
0
0.5
3.5
3.0
2.5
2.0
1.5
1.0
4.0
4.5
5.0
IB=0mA
2mA
12mA
16mA
18mA
20mA
4mA
8mA
14mA
6mA
30mA
10mA
hFE -- IC
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IT13457
3
5
7
2
100
3
5
7
0.01
3
25
0.1
72 3
5
1.0
10
72
3
2
35
5
7
Ta=75
°C
25
°C
VCE=2V
25
20
15
5
10
0
0
IT13456
0.5
1.0
1.5
VCE=2V
--25
°C
VR
RB
VCC=20V
IC=20IB1= --20IB2=5A
VBE= --5V
+
+
50Ω
INPUT
OUTPUT
RL
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2



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