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2N7002ZG-AE2-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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2N7002ZG-AE2-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-273.F 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <7.5Ω * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2N7002ZL-AE2-R 2N7002ZG-AE2-R SOT-23-3 S G D Tape Reel MARKING |
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