2SD1628G-X-AB3-R datasheet(2/3 Pages) UTC

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2SD1628

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-045.a

ABSOLUATE MAXIUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Pulse

ICP

Collector Dissipation

0.5

Junction Temperature

150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Saturation Voltage

VCE(SAT) IC =3A, IB =60mA

500

Base-Emitter Saturation Voltage

VBE(SAT) IC =3A, IB =60mA

1.5

Collector Cut-Off Current

ICBO

VCB =50V, IE =0

100

Emitter Cut-Off Current

IEBO

VEB =5V, IC =0

100

hFE1

VCE =2V, IC =0.5A

120

560

DC Current Gain

hFE2

VCE =2V, IC =3A

Output Capacitance

Cob

VCB =10V, f =1MHz

Transition Frequency

VCE =10V, IC =50mA

120

MHz

Turn On Time

tON

Storage Time

300

Fall Time

See specified Test circuit

■

CLASSIFICATION OF hFE1

RANK

RANGE

120 ~ 200

160 ~ 320

280 ~ 560

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