5N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-476.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous

5

A

Drain Current

Pulsed (Note 1)

20

A

Avalanche Current (Note 1)

5

A

Single Pulsed (Note 2)

300

mJ

Avalanche Energy

Repetitive (Note 1)

7.3

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220F

38

W

TO-252

54

W

Power Dissipation

TO-262

125

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F

62.5

°C/W

TO-252

110

°C/W

Junction to Ambient

TO-262

62.5

°C/W

TO-220F

3.25

°C/W

TO-252

2.13

°C/W

Junction to Case

TO-262

1

°C/W