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7N10G-AA3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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7N10G-AA3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-394.d 7 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode. The UTC 7N10 is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters,. FEATURES * Low Gate Charge: 5.8 nC (TYP.) * Low CRSS: 10 pF (TYP.) * 7A, 100V, RDS(ON) = 0.35Ω @VGS = 10 V * Fast Switching * Improved dv/dt Capability SYMBOL (2)D (3)S (1) G ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 7N10L-AA3-R 7N10G-AA3-R SOT-223 G D S Tape Reel 7N10L-TN3-R 7N10G-TN3-R TO-252 G D S Tape Reel |
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Descrizione simile - 7N10G-AA3-R |
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