D882SSL-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

D882SS

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-018,D

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Pulse

ICP

Base Current

0.6

Ta=25°C

350

Collector Dissipation

TC=25°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100μA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, IC=0

Collector Cut-off Current

ICBO

VCB=30V, IE=0

1000

Emitter Cut-off Current

IEBO

VEB=3V, IC=0

1000

hFE1

VCE=2V, IC=20mA

200

DC Current Gain (Note)

hFE2

VCE=2V, IC=1A

100

150

400

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=2A, IB=0.2A

0.3

0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=2A, IB=0.2A

1.0

2.0

Current Gain Bandwidth Product

VCE=5V, IC=0.1A

MHz

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

Note: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF hFE2

RANK

RANGE

100-200

160-320

200-400

D882SSL-X-AE3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

D882SSL-X-AE3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL