IXFP5N100P datasheet(4/4 Pages) IXYS

Il numero della parte	IXFP5N100P

Spiegazioni elettronici	Polar Power MOSFET HiPerFET

PDF	4 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

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4 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFA5N100P IXFH5N100P

IXFP5N100P

Fig. 7. Input Admittance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

0.00.5

1.01.5

2.02.5

3.03.5

4.0

4.5

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0.40.5

0.60.7

0.80.9

1.01.1

1.2

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 500V

I D = 2.5A

I G = 10mA

Fig. 11. Capacitance

100

1,000

10,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS REF: F_5N100P(55-744)6-27-08

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