IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGF32N170

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

20

30

S

C

ies

4290

pF

C

oes

V

167

pF

C

res

47

pF

Q

g

146

nC

Q

ge

I

28

nC

Q

gc

52

nC

t

d(on)

45

ns

t

ri

38

ns

t

d(off)

270

500

ns

t

fi

250

500

ns

E

off

10.6

20 mJ

t

d(on)

48

ns

t

ri

42

ns

E

off

6.0

mJ

t

d(off)

360

ns

t

fi

560

ns

E

off

13.5

mJ

R

thJC

0.62 °C/W

R

thCS

0.15

°C/W

R

thJA

30

°C/W

Inductive load, T

I

V

2. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Inductive load, T

I

V