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IXGH6N170 Scheda tecnica(PDF) 2 Page - IXYS Corporation

Il numero della parte IXGH6N170
Spiegazioni elettronici  High Voltage IGBT
PDF  4 Pages
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Produttore elettronici  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH6N170 Scheda tecnica(HTML) 2 Page - IXYS Corporation

  IXGH6N170 Datasheet HTML 1Page - IXYS Corporation IXGH6N170 Datasheet HTML 2Page - IXYS Corporation IXGH6N170 Datasheet HTML 3Page - IXYS Corporation IXGH6N170 Datasheet HTML 4Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 6N170
IXGT 6N170
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
∅ P
TO-247 AD Outline
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90; VCE = 10 V,
3
4 .5
S
Pulse test, t
≤ 300 μs, duty cycle ≤ 2 %
I
C(ON)
V
GE = 15V, VCE = 10V
28
A
C
ies
33
0
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
23
pF
C
res
6pF
Q
g
20
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
3.6
nC
Q
gc
8nC
t
d(on)
40
n s
t
ri
36
n s
t
d(off)
250
500
n s
t
fi
290
500
n s
E
off
1.5
2.5 mJ
t
d(on)
45
n s
t
ri
40
n s
E
on
0.5
mJ
t
d(off)
300
n s
t
fi
300
n s
E
off
2.0
mJ
R
thJC
1.65 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J = 125°
°°°°C
I
C = IC90, VGE = 15 V
V
CE = 0.8 VCES, RG = Roff = 33 Ω
Inductive load, T
J = 25°
°°°°C
I
C = IC90, VGE = 15 V
V
CE = 0.8 VCES, RG = Roff = 33 Ω
Min Recommended Footprint
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e
5.45 BSC
.215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3
0.25 BSC
.010 BSC
L4
3.80
4.10
.150
.161
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734B2
7,063,975B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
7,071,537
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728B1
6,583,505
6,710,463
6,771,478B2
7,071,537



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