SFF60P05Z datasheet(2/3 Pages) SSDI

2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0045E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF60P05M

SFF60P05Z

Electrical Characteristics 4/

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS = 0V, ID = 250A)

BVDSS

-50

-70

––

Volts

Drain to Source On State Resistance

(VGS = -10V, ID = 60A)

RDS(on)1

––

0.021

0.033



Drain to Source On State Resistance

(VGS = -10V, ID = 30A)

RDS(on)2

––

0.021

––



Gate Threshold Voltage

(VDS = VGS, ID = -250A)

VGS(th)

-2.0

-2.8

-4.0

Volts

Forward Transconductance

(VDS > ID(on) x RDS(on) Max, IDs = 50% of Rated ID)

gfs

––

Zero Gate Voltage Drain Current

(VDS = 50 V, VGS = 0V)

(VDS = 40 V, VGS = 0V)

TA = 25

TA = 125

IDSS

––

0.005

––

A

Gate to Source Leakage (For

Gate to Source Leakage

At Rated VGS

IGSS

––

-10

-100

100

A

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = -10V

VDD = 40V

ID = 60A

Qgs

Qgd

––

200

300

125

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VDD = 25 V

ID = 30 A

RL = 6.2

t(on)

td(on)

––

125

––

t(off)

td(off)

––

225

––

Diode Forward Voltage

IS = Rated ID

VGS = 0V

TJ = 25ºC

VSD

––

-1.3

-1.9

Volts

Diode Reverse Recovery Time

IF = 10A

di/dt = 100A/usec

trr

Qrr

––

140

––

200

––

C

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = -25V

f = 1 MHz

Ciss

Coss

Crss

––

6000

1800

500

––

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