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TLRMK37TP Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TLRMK37TP
Spiegazioni elettronici  Panel Circuit Indicator
PDF  4 Pages
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLRMK37TP Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

  TLRMK37TP Datasheet HTML 1Page - Toshiba Semiconductor TLRMK37TP Datasheet HTML 2Page - Toshiba Semiconductor TLRMK37TP Datasheet HTML 3Page - Toshiba Semiconductor TLRMK37TP Datasheet HTML 4Page - Toshiba Semiconductor  
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TLRMK37TP(MT1,F)
2010-03-18
2
Electrical and Optical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 20 mA
(Note 2)
1.85
2.15
2.45
V
Reverse current
IR
VR = 4 V
50
µA
Luminous intensity
IV
IF = 20 mA
(Note 2)
1900
5700
10700
mcd
Peak emission wavelength
λP
IF = 20 mA
636
nm
Spectral line half width
∆λ
IF = 20 mA
14
nm
Dominant wavelength
λd
IF = 20 mA
620
626
634
nm
Note 2: Lamps are classified into the following ranks according to their luminous intensity and forward voltage.
Each packing box includes single Luminous Intensity class.
IV _ rank classification
Rank
Min
Max
Accuracy
T
1900
3380
U
3380
6010
±
22.5%
V
6010
10700
Unit
mcd
Forward voltage _ rank classification
Rank
Min
Max
Accuracy
A
1.85
2.05
B
2.05
2.25
±
0.05V
C
2.25
2.45
Unit
V
Precaution
Please be careful of the followings
• Soldering temperature: 260°C max
Soldering time: 3 s max
(Soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.



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