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BFP720ESD Scheda tecnica(PDF) 10 Page - Infineon Technologies AG

Il numero della parte BFP720ESD
Spiegazioni elettronici  Robust High Performance Low Noise Bipolar RF Transistor
PDF  29 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720ESD Scheda tecnica(HTML) 10 Page - Infineon Technologies AG

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BFP720ESD
Maximum Ratings
Data Sheet
10
Revision 1.0, 2010-06-29
3
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3
Maximum Ratings at
T
A = 25°C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
V
CEO
Open base
–4.2
V
T
A = 25°C
–3.7
V
T
A = -55 °C
Collector base voltage1)
1) Low
V
CBO due to integrated protection circuits.
V
CBO
Open emitter
–4.9
V
T
A = 25°C
–4.4
V
T
A = -55 °C
Collector emitter voltage2)
2)
V
CES is identical to VCEO due to integrated protection circuits.
V
CES
Emitter / base shortened
–4.2
V
T
A = 25°C
–3.7
V
T
A = -55 °C
Base current3)
3) Sustainable reverse bias current is high due to integrated protection circuits.
IB
-10
3
mA
Collector current
IC
–30
mA
RF input power
PRFin
–21
dBm
ESD stress pulse4)
4) ESD robustness is high due to integrated protection circuits.
VESD
-2
2
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation5)
5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Ptot
–100
mW
T
S ≤ 108 °C
Junction temperature
T
J
–150
°C
Storage temperature
T
Stg
-55
150
°C



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