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BSB012NE2LX Scheda tecnica(PDF) 5 Page - Infineon Technologies AG

Il numero della parte BSB012NE2LX
Spiegazioni elettronici  n-Channel Power MOSFET
PDF  13 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSB012NE2LX Scheda tecnica(HTML) 5 Page - Infineon Technologies AG

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OptiMOS™ Power-MOSFET
BSB012NE2LX
Electrical characteristics
Final Data Sheet
4
2.0, 2011-03-18
Table 6
Gate charge characteristics
1)
1) See figure 16 for gate charge parameter definition
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Gate to source charge
Q
gs
-12
-
nC
V
DD=12 V,
I
D=30 A,
V
GS=0 to 4.5 V
Gate charge at threshold
Q
g(th)
-7.9
-
Gate to drain charge
Q
gd
-7.2
-
Switching charge
Q
sw
-11
-
Gate charge total
Q
g
-32
-
Gate plateau voltage
V
plateau
-2.4
-
V
Gate charge total
Q
g
-67
-
nC
V
DD=12 V,
I
D=30 A,
V
GS=0 to 10V
Gate charge total, sync. FET
Q
g(sync)
-28
-
V
DS=0.1 V,
V
GS=0 to 4.5 V
Output charge
Q
oss
-35
-
V
DD=12 V, VGS=0 V
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode continuous forward current
I
s
--
57
A
T
C=25 °C
Diode pulse current
I
S,pulse
--
228
Diode forward voltage
V
SD
-0.8
1
V
V
GS=0 V, IF=30 A,
T
j=25 °C
Reverse recovery charge
Q
rr
-20
-
nC
V
R=15 V, IF=Is,
d
i
F/dt=400 A/µs



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