2N5682 datasheet(2/2 Pages) SEME-LAB

2 / 2 page

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

µA

MHz

Rthj-case

Rthj-amb

17.5

175

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

°C/W

100

120

0.6

150

2N5681

2N5682

Prelim.3/00

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Website: http://www.semelab.co.uk

ICBO

ICEV

ICEO

IEBO

VCEO(sus)*

VCE(sat)*

VBE*

hFE*

CCBO

hfe

Collector Cut Off Current

Emitter Cut Off Current

Collector Emitter Sustaining Voltage

Collector Emitter Saturation Voltage

Base Emitter Voltage

DC Current Gain

Transistion Frequency

Collector Base Capacitance

Small Signal Current Gain

IE = 0

for 2N5681

VCB = 100V

for 2N5682

VCB = 120V

VBE = -1.5

for 2N5681

VCE = 100V

for 2N5682

VCE = 120V

Tcase = 150°C

for 2N5681

VCE = 100V

for 2n5682

VCE = 120V

IB = 0

for 2N5681

VCE = 70V

for 2N5682

VCE = 80V

IC = 0

VEB = 4V

IB = 0

IC = -10mA

for 2N5681

for 2N5682

IC = 250mA

IB = 25mA

IC = 500mA

IB = 50mA

IC = 1A

IB = 200mA

IC = 250mA

VCE = 2V

IC = 250mA

VCE = 2V

IC = 1A

VCE = 2V

IC = 100mA

VCE = 10V

f = 10MHz

IE = 0

VCB = 20V

f = 1MHz

IC = 0.2A

VCE = 1.5V

f = 1KHz

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

* Pulse test tp = 300ms , d < 2%

THERMAL DATA

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