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2SA720 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA720 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() 2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 26-Jan-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For low-frequency power amplification and driver amplification. CLASSIFICATION OF hFE Product-Rank 2SA720-Q 2SA720-R 2SA720-S Range 85~170 120~240 170~340 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -10μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -10μA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -20V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -4V, IC=0 DC Current Gain hFE(1) 85 - 340 VCE= -10V, IC= -0.15A hFE(2) 40 - - VCE= -10V, IC= -0.5A Collector to Emitter Saturation Voltage VCE(sat) - - -0.6 V IC= -0.3A, IB= -30mA Base to Emitter Saturation Voltage VBE(sat) - - -1.5 V IC= -0.3A, IB= -30mA Transition Frequency fT - 200 - MHz VCE= -10V, IC= -50mA, f=200MHz Collector Output Capacitance Cob - - 15 pF VCB= -10V, IE= 0, f=1MHz TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G1.27 TYP. H1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J Emitter Collector Base |
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