D1053UK

Prelim. 3/95

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

70

1

1

17

0.8

0.1

7.5

45

20:1

60

30

2.5

f = 1GHz

f = 1MHz

f = 1MHz

V

mA

µA

V

mhos

V

dB

%

—

pF

pF

pF

Drain–Source Breakdown

Voltage

Zero Gate Voltage

Drain Current

Gate Leakage Current

Gate Threshold Voltage*

Forward Transconductance*

Gate Threshold Voltage

Matching Between Sides

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

Thermal Resistance Junction – Case

Max. 1.0°C / W

THERMAL DATA

* Pulse Test:

Pulse Duration = 300

µs , Duty Cycle ≤ 2%

TOTAL DEVICE

PER SIDE

PER SIDE

η

VSWR