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Data Sheet TLE6284G

Data Sheet

Rev 2.4 2008-03-18

Estimation of power loss within the Driver IC

The power loss within the Driver IC is strongly dependent on the use of the driver and the

external components. Nevertheless a rough estimation of the worst case power loss is pos-

sible. Worst case calculation is:

PLoss = (Qgate*n*const* fPWM + IVS(open))* VVs - PRGate

With:

PLoss = Power loss within the Driver IC

fPWM = Switching freqency

Qgate = Total gate charge of used MOSFETs at 10V VGS

= Number of switched MOSFETs

const = Constant considering some leakage current in the driver (about 1.2)

IVS(open) = Current consumption of driver without connected Mosfets during switching

VVS

= Voltage at Vs

PRGate = Power dissipation in the external gate resistors

This value can be reduced dramatically by usage of external gate resistors.

Conditions :

Junction temperature Tj = 25

Number of switched MOSFET n = 2

Power dissipation in the external gate resistors PRGate = 0,2*PLoss

Estimated Power Loss PLOSS within the Driver IC

for different supply voltages Vs

at QG = 100nC @ VGS = 10V

0,1

0,2

0,3

0,4

0,5

0,6

0,7

0,8

203040

5060

PWM Frequency (kHz)

Vs = 8V

Vs = 14V

Vs = 18V

Estimated Power Loss PLOSS within the Driver IC

for different gate charges QG

at supply voltage Vs = 14V

0,1

0,2

0,3

0,4

0,5

0,6

0,7

0,8

102030

4050

PWM Frequency (kHz)

QG = 50nC

QG = 100nC

QG = 200nC

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