TLE7181EM datasheet(13/29 Pages) INFINEON

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Data Sheet

Rev 1.1, 2010-09-30

H-Bridge and Dual Half Bridge Driver IC

TLE7181EM

Description and Electrical Characteristics

5.1.9

Electrical Characteristics

Electrical Characteristics MOSFET Drivers

S = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Control inputs

5.1.1

Low level input voltage of PWM;

DIR

I_LL

––

1.0

–

5.1.2

High level input voltage of PWM;

DIR

I_HL

2.0

––V

–

5.1.3

Input hysteresis of PWM; DIR

100

200

–

5.1.4

PWM; DIR pull-down resistors to

GND

–

5.1.5

Low level input voltage of ENA

E_LL

–

0.75

–

5.1.6

High level input voltage of ENA

E_HL

2.1

––V

–

5.1.7

Input hysteresis of ENA

200

–

5.1.8

ENA pull-down resistor to GND

125

200

–

5.1.9

Low level input voltage of DRVDIS

D_LL

––

1.0

–

5.1.10

High level input voltage of DRVDIS

D_HL

2.0

––V

–

5.1.11

Input hysteresis of DRVDIS

100

200

–

5.1.12

DRVDIS pull-up resistor to internal

supply

–

MOSFET driver output

5.1.13

Output source resistance

Sou

2–

13.5

Load=-20mA

5.1.14

Output sink resistance

Sink

2–

9.0

Load=20mA

5.1.15

High level output voltage Gxx vs.

Sxx

Gxx1

–11

13.5V

≤V

VS≤34V;

Load=0mA

5.1.16

High level output voltage Gxx vs.

Sxx

Gxx2

–11

13.5

13.5V

≤V

VS≤34V;

Load=20nF;

D.C.=50%;

PWM=20kHz

5.1.17

High level output voltage GHx vs.

SHx1)

GHx3

–

VS-1.5 –

7.0V<V

VS<13.5V;

Load=20nF;

D.C.=50%;

PWM=20kHz

5.1.18

High level output voltage GLx vs.

GND1)

GLx3

–

VS-0.5 –

7.0V<V

VS<13.5V;

Load=20nF;

PWM=20kHz &

D.C.=50%;

or D.C=100%

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