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APT97N65LC6 Scheda tecnica(PDF) 3 Page - Microsemi Corporation

Il numero della parte APT97N65LC6
Spiegazioni elettronici  Super Junction MOSFET
PDF  5 Pages
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Produttore elettronici  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT97N65LC6 Scheda tecnica(HTML) 3 Page - Microsemi Corporation

  APT97N65LC6 Datasheet HTML 1Page - Microsemi Corporation APT97N65LC6 Datasheet HTML 2Page - Microsemi Corporation APT97N65LC6 Datasheet HTML 3Page - Microsemi Corporation APT97N65LC6 Datasheet HTML 4Page - Microsemi Corporation APT97N65LC6 Datasheet HTML 5Page - Microsemi Corporation  
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Typical Performance Curves
APT97N65B2_LC6
0.70
0.80
0.90
1.00
1.10
1.20
-50
0
50
100
150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
0
50
100
150
0
0.40
0.80
1.20
1.60
2.00
0
50
100
150
200
250
0
20
40
60
80
100
25
50
75
100
125
150
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
200
225
0
5
10
15
20
25
30
6.5V
15V
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
T
C, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
I
D, DRAIN CURRENT (A)
FIGURE 4, R
DS(ON) vs Drain Current
T
J, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
T
C, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
0
0.50
1.00
1.50
2.00
2.50
3.00
-50 -25
0
25
50
75 100 125 150
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
4.5V
5.5V
6V
5V
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 48.5A
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
0.10
1
10
100
1000
1
10
100
1000
1ms
100ms
100µs
10ms
10µs
7V
10V
Rds On



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